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home > Disco Ssd Samsung 990 Evo Plus Ssd 4tb Pcie 4.0x 4 Nvme 2.0 Mz-V9s4t0bw > Disco Ssd Samsung 990 Evo Plus Ssd 4tb Pcie 4.0x 4 Nvme 2.0 Mz-V9s4t0bw
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Disco Ssd Samsung 990 Evo Plus Ssd 4tb Pcie 4.0x 4 Nvme 2.0 Mz-V9s4t0bwSamsung MZ V9S4T0 4 TB M. 2 PCI Express 4. 0 NVMe V NAND TLC Samsung MZ V9S4T0, 4 TB, M. 2, 7150 MB s Puntos clave del producto 4 TB M. 2 PCI Express 4. 0 Velocidad de lectura: 7150 MB s 850000 IOPS Velocidad de escritura: 6300 MB s 1350000 IOPS V NAND TLC NVMe 2. 0 Encriptacin de hardware 256 bit AES Soporte S. M. A. R. T. Soporte TRIM Componente para: PC Caractersticas Versin NVMe: 2. 0 Algoritmos de seguridad soportados: 256 bit AES SDD, capacidad:
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Samsung MZ-V9S4T0 4 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

Samsung MZ-V9S4T0, 4 TB, M.2, 7150 MB/s

Puntos clave del producto

  • 4 TB M.2 PCI Express 4.0
  • Velocidad de lectura: 7150 MB/s 850000 IOPS
  • Velocidad de escritura: 6300 MB/s 1350000 IOPS
  • V-NAND TLC NVMe 2.0
  • Encriptación de hardware 256-bit AES
  • Soporte S.M.A.R.T. Soporte TRIM
  • Componente para: PC

Características

  • Versión NVMe: 2.0
  • Algoritmos de seguridad soportados: 256-bit AES
  • SDD, capacidad: 4 TB
  • Factor de forma de disco SSD: M.2
  • Interfaz: PCI Express 4.0
  • NVMe: Si
  • Tipo de memoria: V-NAND TLC
  • Componente para: PC
  • Encriptación de hardware: Si
  • Tamaño de la unidad SSD M.2: 2280 (22 x 80 mm)
  • Velocidad de lectura: 7150 MB/s
  • Velocidad de escritura: 6300 MB/s
  • Lectura aleatoria (4KB): 850000 IOPS
  • Escritura aleatoria (4KB): 1350000 IOPS
  • Soporte S.M.A.R.T.: Si
  • Soporte TRIM: Si
  • Tiempo medio entre fallos: 1500000 h

Peso y dimensiones

  • Ancho: 80,2 mm
  • Profundidad: 2,38 mm
  • Altura: 22,1 mm
  • Peso: 9 g

Condiciones ambientales

  • Intervalo de temperatura operativa: 0 - 70 °C

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Disco Ssd Samsung 990 Evo Plus Ssd 4tb Pcie 4.0x 4 Nvme 2.0 Mz-V9s4t0bw

Item no : 2828177853
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